Low temperature deposition of SiNx:H using SiH4–N2 or SiH4–NH3 distributed electron cyclotron resonance microwave plasma
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6), 1919-1926
- https://doi.org/10.1116/1.589579
Abstract
No abstract availableKeywords
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