Light-induced annealing of metastable defects in hydrogenated amorphous silicon
- 7 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (23), 3001-3003
- https://doi.org/10.1063/1.109170
Abstract
Measurements of light-induced creation and annealing of metastable dangling bond defects in undoped hydrogenated amorphous silicon thin films are reported. A decrease of the defect density by 50% induced by continuous illumination is observed after fast defect creation by pulsed light. The kinetics of creation and recovery are discussed, as well as the implications for present models treating metastable defects in hydrogenated amorphous silicon.Keywords
This publication has 9 references indexed in Scilit:
- Influence of illumination during annealing of quenched defects in undoped amorphous siliconPhysical Review B, 1992
- Optical bleaching of metastable defects in amorphous siliconApplied Physics Letters, 1992
- Intensity and temperature dependence of the steady-state light-induced defect density ina-Si:HPhysical Review B, 1991
- Fast metastable defect-creation in amorphous silicon by femtosecond light pulsesPhysical Review Letters, 1991
- Current-induced defect creation and recovery in hydrogenated amorphous siliconApplied Physics Letters, 1991
- Saturation of the light-induced defect density in hydrogenated amorphous siliconApplied Physics Letters, 1989
- The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous siliconPhilosophical Magazine Letters, 1989
- Light-induced recovery in a-Si:H solar cellsAIP Conference Proceedings, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985