Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases
- 21 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (12), 1453-1455
- https://doi.org/10.1063/1.107515
Abstract
We report a study of the influences of MBE conditions on the low‐temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high‐growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low‐temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4‐K mobility.Keywords
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