Selection rules of intersubband transitions in conduction-band quantum wells
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (11), 7474-7482
- https://doi.org/10.1103/physrevb.50.7474
Abstract
In this work, optical intersubband transitions in conduction-band quantum wells have been reexamined in the multiband scheme. A generalized theory, with emphasis on the selection rules for the in-plane polarization, is developed in Kane’s k⋅P formalism. By taking into account the interband couplings, it is shown that the optical transition between any pair of electron subbands can occur with either the normal-to-plane polarized light or the in-plane polarized light. The characteristics of intersubband transitions depend upon whether the subband index differences Δn are odd integers (Δn=1,3,. . .) or even integers (Δn=2,4,. . .). In the case of Δn being even integers, intersubband transitions of both polarizations are allowed for electrons with a finite in-plane wave vector. In fact, the transition rates are proportional to the value of the in-plane wave vector, and the in-plane polarized transition is dominant. In the case of Δn being an odd integer, optical intersubband transitions of both polarizations can occur with a zero in-plane wave vector, but the normal-to-plane polarized transition is dominant. Consequences for device implementation such as a normal-incidence infrared photodetector that makes use of the allowed in-plane polarized optical transitions are discussed.Keywords
This publication has 22 references indexed in Scilit:
- Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wellsApplied Physics Letters, 1992
- Bound and quasibound states in leaky quantum wellsPhysical Review B, 1992
- Optical transitions in semiconductor superlattices with zinc-blende structure in thek⋅papproximationPhysical Review B, 1990
- HgTe/CdTe superlattice band calculation with a transfer matrix methodJournal of Vacuum Science & Technology A, 1989
- Hole subbands in strained GaAs-As quantum wells: Exact solution of the effective-mass equationPhysical Review B, 1987
- Continuity conditions for envelope functions at semiconductor interfaces derived from the Bastard modelSemiconductor Science and Technology, 1987
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Electronic Properties of Flat-Band Semiconductor HeterostructuresPhysical Review Letters, 1981
- Space-Charge Effects on Electron TunnelingPhysical Review B, 1966