Weak-Field Magnetoresistance of Impurity Conduction in-Type Germanium
- 15 September 1962
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 127 (6), 1954-1961
- https://doi.org/10.1103/physrev.127.1954
Abstract
The coefficients , , and of the weak-field magnetoresistance in -type germanium are calculated in the phonon-induced hopping region at low temperatures. The shrinking of each donor wave function by a magnetic field decreases the transition probability of electrons from a donor site to an unoccupied one and gives rise to a magnetoresistive effect. The phase difference produced by the field between two neighboring donor wave functions contributes to the magnetoresistance to the same order of magnitude as the effect of the shrinking. The results show some characteristic properties of , , and different from those of electrons in the conduction band: (1) The absolute magnitude of the coefficients is larger for specimens with smaller carrier mobility; (2) the magnitude is much larger than that expected from the usual transport theory of conduction electrons; (3) the isotropic part of the coefficients is the largest; and (4) the coefficient , which represents the anisotropy of the electronic motion, is the smallest among the three coefficients. These properties are in qualitative agreement with recent experiments in a slightly higher impurity concentration range in -type germanium.
Keywords
This publication has 26 references indexed in Scilit:
- Two-Phonon Transitions in the Impurity Conduction in SemiconductorsPhysical Review B, 1962
- Hall Effect in Impurity ConductionPhysical Review B, 1961
- Magnetically induced impurity banding in n-InSbJournal of Physics and Chemistry of Solids, 1958
- Effect of a magnetic field on donor impurity levels in InSbJournal of Physics and Chemistry of Solids, 1956
- Hydrogen atom in a strong magnetic fieldJournal of Physics and Chemistry of Solids, 1956
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1954
- Theory of the Galvanomagnetic Effects in GermaniumPhysical Review B, 1954
- The Magneto-Resistance Effect in Oriented Single Crystals of GermaniumPhysical Review B, 1951
- Note on the Theory of Resistance of a Cubic Semiconductor in a Magnetic FieldPhysical Review B, 1950