Effect of thermal treatment of passivation integrity of chemical vapor deposition silicon nitride
- 27 April 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (17), 2074-2076
- https://doi.org/10.1063/1.107093
Abstract
The relationship between the pinhole density in silicon nitride layers deposited on oxide-silicon structures and etching in buffered hydrofluoric acid is investigated in relation to the cooling down rate after Si3N4 deposition and subsequent annealing conditions. Si3N4 layers were deposited using a high temperature atmospheric pressure chemical vapor deposition technique on SiO2 patterned silicon substrates additionally covered with a thin SiO2 layer. Average numbers of pinholes per chip, as function of etch time, are presented both for differently treated wafers and for the specific locations on chips. The phenomenon is attributed to the preferential etching of Si3N4 in locations under stress.Keywords
This publication has 13 references indexed in Scilit:
- Stress in silicon at Si3N4/SiO2 film edges and viscoelastic behavior of SiO2 filmsJournal of Applied Physics, 1985
- Post-deposition high temperature processing of silicon nitrideThin Solid Films, 1983
- Ion-Sensitive Field Effect TransistorsPublished by Elsevier ,1980
- Hydrogen concentration profiles and chemical bonding in silicon nitrideJournal of Electronic Materials, 1979
- Advances in deposition processes for passivation filmsJournal of Vacuum Science and Technology, 1977
- Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on AnnealingJournal of the Electrochemical Society, 1977
- Viscous flow of thermal SiO2Applied Physics Letters, 1977
- Influence of crystal structure on the luminescence of ions with s2 configurationJournal of Solid State Chemistry, 1977
- Generation of Dislocations Induced by Chemical Vapor Deposited Si3N4Films on SiliconJapanese Journal of Applied Physics, 1972
- Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride FilmJapanese Journal of Applied Physics, 1967