Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices
- 28 December 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (26), 3908-3910
- https://doi.org/10.1063/1.122932
Abstract
Thermally induced strain caused by device packaging is studied in high-power semiconductor lasers by a noninvasive technique. Fourier-transform photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of quantum-confined optical transitions in the optical active region. These shifts by up to 7 meV serve as a measure for strain and are compared with model calculations. For a given packaging architecture, about one quarter of the mounting-induced strain is transferred to the quantum-well region of the device. Spatially resolved measurements demonstrate a lateral strain gradient in the devices.Keywords
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