10-nm linewidth electron beam lithography on GaAs
- 1 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1), 38-40
- https://doi.org/10.1063/1.93757
Abstract
Metal features with 10-nm linewidths were produced on thick GaAs substrates using electron beam lithography. A single layer of polymethylmethacrylate (PMMA) was exposed by an approximately 2-nm-diam electron beam with energies ranging from 20 to 120 keV. Gold-palladium lines less than 20 nm wide, and 15 nm thick, with center-to-center spacings of 70 nm, were produced over 15-μm square fields at all electron beam energies by lift off. The exposure latitude increased significantly for higher electron energies, with 10-nm-wide metal lines formed using a 120-keV writing beam.Keywords
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