Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surface
- 11 September 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (11), 1164-1167
- https://doi.org/10.1103/physrevlett.63.1164
Abstract
We study surface and bulk equilibrium in Si-Ge alloys by direct simulation. The composition at a reconstructed (100) surface varies with depth in a complex oscillatory way. Lateral ordering occurs even in the fourth layer, driven by the local stress field. The bulk phase diagram is well described by regular solution theory. DOI: http://dx.doi.org/10.1103/PhysRevLett.63.1164 © 1989 The American Physical SocietyKeywords
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