Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
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- 27 August 2002
- journal article
- research article
- Published by Wiley in Progress In Photovoltaics
- Vol. 10 (6), 417-426
- https://doi.org/10.1002/pip.448
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- High quality GaAs qrowth by MBE on Si using GeSi buffers and prospects for space photovoltaicsProgress In Photovoltaics, 2000
- Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substratesApplied Physics Letters, 2000
- High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substratesApplied Physics Letters, 1998
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-SiJapanese Journal of Applied Physics, 1998
- Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusionJournal of Electronic Materials, 1998
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishingApplied Physics Letters, 1998
- Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devicesJournal of Materials Research, 1991
- High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layersJournal of Crystal Growth, 1991
- Minority Carrier Lifetime of GaAs on SiliconJournal of the Electrochemical Society, 1990
- Efficiency calculations of thin-film GaAs solar cells on Si substratesJournal of Applied Physics, 1985