Measurements of Lifetime in GaAs Diodes
- 1 September 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (10), 4084-4086
- https://doi.org/10.1063/1.1709076
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Carrier recombination in gallium arsenideSolid-State Electronics, 1965
- DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASERApplied Physics Letters, 1964
- Determination of the Active Region in Light-Emitting GaAs Diodes [Letter to the Editor]IBM Journal of Research and Development, 1963
- Degenerate Germanium. I. Tunnel, Excess, and Thermal Current in Tunnel DiodesPhysical Review B, 1962