Metal-insulator transitions in (Ti1-xVx)4O7
- 14 April 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (7), L151-L156
- https://doi.org/10.1088/0022-3719/10/7/001
Abstract
X-ray crystallographic studies, electrical resistivity and thermal analysis measurements have been performed on (Ti0.994V0.006)4O7 single crystals. It is shown that the incorporation of V stabilizes the disordered intermediate phase of pure Ti4O7.Keywords
This publication has 10 references indexed in Scilit:
- Twinning in Ti4O7Journal of Applied Crystallography, 1976
- Metal-insulator transitions insingle crystals: Crystal characterization, specific heat, and electron paramagnetic resonancePhysical Review B, 1976
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Heat Capacity and Metal-Insulator Transitions in Ti_{4}O_{7} Single CrystalsPhysical Review Letters, 1974
- Preparation of titanium lower oxides single crystals by chemical transport reactionJournal of Crystal Growth, 1973
- Structural aspects of the metal-insulator transition in V4O7Journal of Solid State Chemistry, 1973
- Mössbauer Effect Study of Fe57 Doped in the VnO2n-1 SystemJournal of the Physics Society Japan, 1972
- The crystal structure of Ti4O7, a member of the homologous series TinO2n−1Journal of Solid State Chemistry, 1971
- X-ray diffraction studies of the metal insulator transitions in Ti4O7, V4O7 and VO2Materials Research Bulletin, 1970
- Electrical Properties of the V4O7Single CrystalsJournal of the Physics Society Japan, 1970