Ortho and Para Interstitial $H_{2}$ in Silicon

31 October 2002

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 89 (21), 215501
https://doi.org/10.1103/physrevlett.89.215501

Abstract

A Raman scattering study of

H_{2}

trapped at the interstitial

T

site in Si is presented. Both ortho and para nuclear-spin states of

H_{2}

and

D_{2}

have been observed. It is shown that the Raman signals of

H_{2}

and

D_{2}

in the

J = 0

state, where

J

is the rotational quantum number, disappear preferentially from the spectra during laser excitation or prolonged storage at room temperature in the dark. This surprising behavior is tentatively explained by different diffusion rates of

H_{2}

in the

J = 0

and

J = 1

states.

Keywords

This publication has 17 references indexed in Scilit:

Key to Understanding Interstitial $H_{2}$ in Si
Physical Review Letters, 2002
Evolution of Hydrogen Platelets in Silicon Determined by Polarized Raman Spectroscopy
Physical Review Letters, 2001
Symmetry of MolecularH2in Si from a Uniaxial Stress Study of the3618.4cm−1Vibrational Line
Physical Review Letters, 1999
Raman Spectroscopy of Hydrogen Molecules in Crystalline Silicon
Physical Review Letters, 1998
Energetics and Vibrational Frequencies of Interstitial $H_{2}$ Molecules in Semiconductors
Physical Review Letters, 1998
Correlation between ${Cu}^{+}$ -ion instability and persistent spectral hole-burning phenomena of CuCl nanocrystals
Physical Review B, 1997
Isolated Hydrogen Molecules in GaAs
Physical Review Letters, 1996
Hydrogen Molecules in Crystalline Silicon Treated with Atomic Hydrogen
Physical Review Letters, 1996
Interstitial muons and hydrogen in crystalline silicon
Physica B+C, 1983
Atomic and molecular hydrogen in the Si lattice
Physics Letters A, 1983

Cited by 47 articles

Ortho and Para InterstitialH2in Silicon

Abstract

Keywords

Ortho and Para Interstitial $H_{2}$ in Silicon