EPR investigations of the defect chemistry of semi-insulating GaAs : Cr
- 1 August 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8), 5425-5430
- https://doi.org/10.1063/1.326645
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- EPR of() in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversionPhysical Review B, 1977
- ESR in semi-insulating GaAs:Cr and colorimetric determination of the Cr contentPhysica Status Solidi (a), 1977
- Hyperfine structure in the EPR spectrum of O−2 on GaAs surfacesPhysics Letters A, 1977
- EPR ofin GaAs—evidence for strong Jahn-Teller effectsPhysical Review B, 1977
- Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESRSolid State Communications, 1976
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964
- Electron Paramagnetic Resonance of Iron in Gallium ArsenidePhysical Review B, 1963