Channeling analysis of mismatch strain in heteroepitaxial CdTe on Cd0.96Zn0.04Te(001)
- 1 November 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9), 3718-3721
- https://doi.org/10.1063/1.339254
Abstract
Channeling is used to study how the lattice mismatch between CdTe layers grown by molecular‐beam epitaxy on Cd0.96Zn0.04Te(001) is accommodated. Planar channeling allows us to determine the tetragonal distortion of the cubic lattice for layer thicknesses lower than the 300‐nm critical thickness. Above 300 nm, planar channeling reveals misfit dislocations at the interface. A discussion of absolute strain measurement by channeling is presented.Keywords
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