Ferroelectricity Down to at Least 2 nm in Multiferroic BiFeO3 Epitaxial Thin Films
- 1 February 2006
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 45 (2L), L187
- https://doi.org/10.1143/jjap.45.l187
Abstract
We report here on the preservation of ferroelectricity down to 2 nm in BiFeO3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings bring insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO3 as a lead-free ferroelectric and multiferroic material for nanoscale devices.Keywords
This publication has 18 references indexed in Scilit:
- Polarization Relaxation Induced by a Depolarization Field in Ultrathin FerroelectricCapacitorsPhysical Review Letters, 2005
- Ferroelectricity in ultrathin perovskite filmsPhysical Review B, 2005
- Ferroelectricity and Tetragonality in UltrathinFilmsPhysical Review Letters, 2005
- Non-thermal atmospheric pressure dischargesJournal of Physics D: Applied Physics, 2005
- Ferroelectricity in Ultrathin Perovskite FilmsScience, 2004
- Space-time parity violation and magnetoelectric interactions in antiferromagnetsJETP Letters, 2004
- Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and HeterostructuresScience, 2004
- Critical thickness for ferroelectricity in perovskite ultrathin filmsNature, 2003
- Epitaxial BiFeO 3 Multiferroic Thin Film HeterostructuresScience, 2003
- Temperature dependence of the crystal and magnetic structures of BiFeO3Journal of Physics C: Solid State Physics, 1980