Coupled quantum well semiconductors with giant electric field tunable nonlinear optical properties in the infrared
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (5), 1313-1326
- https://doi.org/10.1109/3.303697
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopyApplied Physics Letters, 1993
- The evaluation of the matrix element for interband optical transitions in quantum wells using envelope functionsJournal of Physics: Condensed Matter, 1993
- Bandgap and interface engineering for advanced electronic and photonic devicesThin Solid Films, 1992
- Third Order Intersubband Kerr Effect in GaAs/AlGaAs Quantum WellsPublished by Springer Nature ,1992
- Observation of third order optical nonlinearity due to intersubband transitions in AlGaAs/GaAs superlatticesApplied Physics Letters, 1991
- Quantum Electron DevicesPhysics Today, 1990
- Large Stark effects for transitions from local states to global states in quantum well structuresIEEE Journal of Quantum Electronics, 1989
- Interface roughness scattering in GaAs/AlAs quantum wellsApplied Physics Letters, 1987
- Band nonparabolicity effects in semiconductor quantum wellsPhysical Review B, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987