Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency
- 1 November 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (11), 507-509
- https://doi.org/10.1109/55.962645
Abstract
An excellent cutoff frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.Keywords
This publication has 6 references indexed in Scilit:
- Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequencyIEEE Electron Device Letters, 2001
- High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP SubstratesJapanese Journal of Applied Physics, 2000
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff FrequencyJapanese Journal of Applied Physics, 1999
- Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility TransistorsJapanese Journal of Applied Physics, 1998
- 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel EffectsJapanese Journal of Applied Physics, 1994
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992