Low temperature, 600°C annealing of LPCVD films was investigated using x‐ray diffraction, ESR, TEM, and carrier mobility measurements. An optimum deposition temperature of about 550°C was found to yield good crystallinity and high electron mobility for annealed films; large grain sizes, a maximum crystallite size, and a maximum electron spin density were also observed for films deposited at the optimum temperature. The crystallite number was shown to be constant if the deposition temperature was below 570°C. Electron spring density for the as‐deposited films correlated with the crystalline volume by x‐ray diffraction measurements on the films after annealing. This implies that only those amorphous components with high electron spin density can be converted into the crystalline phase by 600°C annealing.