Recombination luminescence in irradiated silicon-effects of thermal annealing and lithium impurity†

Abstract

Luminescence in irradiated silicon has been used to determine the thermal stability of the defects responsible for the recombination. It was found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 °C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E_v − 1.045 eV.