Strain-induced optical waveguiding in GaAs epitaxial layers at 1.15 μm
- 1 January 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (3), 99-100
- https://doi.org/10.1049/el:19790072
Abstract
Transverse optical waveguide modes have been observed in GaAs Schottky-barrier electro-optic waveguide modulators with no electrical bias. This is attributed to the spatial variation of the dielectric constant generated by stresses originating in the metal Schottky-barrier stripe.Keywords
This publication has 1 reference indexed in Scilit:
- Semiconductor Components for Monolithic ApplicationsPublished by Springer Nature ,1975