Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substrates
- 15 November 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (10), 533-535
- https://doi.org/10.1063/1.1654738
Abstract
Epitaxial layers of Ga0.66Al0.34As1−yPy with y ≤ ≈ 0.04 have been grown in order to demonstrate that it is possible to adjust the lattice parameter of a mixed III‐V layer such that it is matched with the GaAs substrate at room temperature. The amount of stress compensation has been determined as a function of y, as well as estimates of the layer thicknesses required to suppress the formation of misfit dislocations.Keywords
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