The vacuum deposition of CuInCe2 thin films is reported. As-deposited films are generally n-type due to selenide deficiencies. The temperature dependence of film mobility, conductivity, and carrier concentration are presented and indicate the dominance of the grain-boundary scattering mechanism. Mobilities of the range 1–20 cm2/V s are reported for as-deposited films. Data are also presented for films annealed in Ar atmospheres. Films annealed in Ar/H2Se can be made p-type with mobilities in the range 1–8 cm2/V s. Electron and x-ray diffraction data are discussed. Grain size data, especially the consideration of the effects of substrate temperature, are included. Photoconductive decay times are reported for the films.