DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTe

15 December 1966

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 9 (12), 427-429
https://doi.org/10.1063/1.1754640

Abstract

Infrared laser emission at a number of wavelengths between 9.4 μ and 13.7 μ has been obtained from diodes of Pb_1−ySn_ySe and Pb_1−xSn_xTe at 12°K and 77°K. Diodes were fabricated from vapor‐grown Pb_1−ySn_ySe and both vapor‐grown and Bridgman‐grown Pb_1−xSn_xTe. Emission data indicate that, as in Pb_1−xSn_xTe, the energy gap in Pb_1−ySn_ySe decreases with increasing Sn concentration, becoming zero at 12°K for some value of y within the range 0.11 ≤ y ≤ 0.14.

Keywords

This publication has 2 references indexed in Scilit:

Band Structure and Laser Action in ${Pb}_{x} {Sn}_{1 - x} Te$
Physical Review Letters, 1966
Optical energy gaps, lattice parameters and solubility limits of solid solutions of SnSe and GeSe in PbTe, and GeSe in SnTe
British Journal of Applied Physics, 1965

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