A 7.7-ps CML using selective-epitaxial SiGe HBTs
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- SiGe-HBTs with high fT at moderate current densitiesElectronics Letters, 1994