Single-frequency tunable external-cavity semiconductor laser using an electro-optic birefringent modulator
- 3 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (1), 19-21
- https://doi.org/10.1063/1.101744
Abstract
An external-cavity semiconductor laser employing a birefringent electro-optic modulator for wavelength tuning is described. Wide-band tuning over 70 Å in a single frequency to residual diode modes and narrow-band tuning over 0.42 Å to many longitudinal modes of the external cavity is demonstrated using different modulator configurations. Threshold current and quantum efficiency are nearly as good as that of the solitary laser diode.Keywords
This publication has 6 references indexed in Scilit:
- Electronically tunable external-cavity semiconductor laserElectronics Letters, 1988
- Narrow-linewidth, electro-optically tunable InGaAsP-Ti:LiNbO3 extended cavity laserApplied Physics Letters, 1987
- Over 720 Ghz (5. 8nm) frequency tuning by a 1.5 μm DBR laser with phase and Bragg wavelength control regionsElectronics Letters, 1987
- Broad wavelength tuning under single-mode oscillation with a multi-electrode distributed feedback laserElectronics Letters, 1986
- Electrooptically tuned external-cavity CW semiconductor laser and FM optical communicationsIEEE Journal of Quantum Electronics, 1979
- Wide-band electro-optical tuning of semiconductor lasersApplied Physics Letters, 1977