InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz
- 1 March 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (3), 412-414
- https://doi.org/10.1109/68.661427
Abstract
Uni-traveling-carrier photodiodes (UTC-PD's) with ultrafast response and high-saturation output are reported. It is experimentally demonstrated that the photoresponse of UTC-PD's is improved by incorporating a step-like potential profile in the photoabsorption layer. The fabricated device shows a peak electrical 3-dB bandwidth of 152 GHz at a low reverse bias voltage of -1.5 V. The output voltage can be increased to as high as 1.9 V at higher reverse bias voltages with the 3-dB bandwidth staying at over three-quarters of the maximum value. To our knowledge, the obtained response is the fastest among those reported for 1.55-μm wavelength photodiodes.Keywords
This publication has 6 references indexed in Scilit:
- A 920-1650-nm high-current photodetectorIEEE Photonics Technology Letters, 1996
- Velocity-matched distributed photodetectors with high-saturation power and large bandwidthIEEE Photonics Technology Letters, 1996
- Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1994
- Electro-optic characterisation of ultrafast photodetectors using adiabatically compressed soliton pulsesElectronics Letters, 1994
- Twenty-Gbit/s signal transmission using a simple high-sensitivity optical receiverPublished by Optica Publishing Group ,1992
- A Ga0.47In0.53As/InP heterophotodiode with reduced dark currentIEEE Journal of Quantum Electronics, 1981