Ratio of Interstitial to Substitutional Zinc in GaAs and its Relation to Zinc Diffusion
- 1 November 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (11), 3387-3389
- https://doi.org/10.1063/1.1729196
Abstract
An order‐of‐magnitude estimate of the ratio of singly charged interstitial to substitutional zinc in GaAs is made by combining experimental data for copper in GaAs with theories of solubility and diffusion of interstitial impurities. Calculations of the diffusion constant on the basis of a substitutional‐interstitial mechanism yield values which agree to within one or two orders of magnitude with experimental values in the temperature range 750° to 1000°C.Keywords
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