Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperature

Abstract

When Ga or Al atoms are evaporated on a clean GaAs surface in an As-free or a very low As pressure atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic is exploited for growing high-quality GaAs and AlGaAs layers at very low temperatures by alternately supplying Ga and/or Al atoms and As4 molecules to the GaAs substrate. Applying this method, AlGaAs-GaAs single quantum well structures with excellent photoluminescence characteristics are grown at 300 °C.