Raman measurements of stress in silicon-on-sapphire device structures
- 15 May 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (10), 895-898
- https://doi.org/10.1063/1.92939
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopySolid-State Electronics, 1980
- Elastoresistance of n-type silicon on sapphireJournal of Applied Physics, 1974
- Mechanical and electrical properties of epitaxial silicon films on spinelSolid-State Electronics, 1968