16K CMOS/SOS asynchronous static RAM
- 1 January 1979
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A CMOS/SOS buried contact process allowing fabrication of dense static memory cells will be described. The technology has been applied to a 16K 5μ polysilicongate RAM with1150μ^{2}(1.78 mil2) cells.Keywords
This publication has 1 reference indexed in Scilit:
- High-density CMOS ROM arraysIEEE Journal of Solid-State Circuits, 1977