The use of charge pumping to characterize generation by interface traps

Abstract

A small rectangular pulse technique for measuring charge-pumping current has been proposed as a method to characterize interface traps near midgap. It is shown theoretically and experimentally that the small rectangular pulse technique can be used to predict the surface generation current measured on a MOSFET or a gated diode. This new technique has the advantage that the measured current is at least 10 to 100 times larger than the surface generation current.