Organometallic chemical vapor deposition (OM‐CVD) growth of and has been obtained using triethylindium (TEI), trimethylantimony (TMS), and arsine on (100) , (100) , and (111)‐B substrates. with excellent morphology was achieved on both (100) and (111)‐B substrates. The measured electron mobility at 300 K of undoped grown on (100) semi‐insulating substrates was 40,000 cm2/V‐s at a carrier concentration of . Carrier concentration of has been measured at 77 K. with mirror‐like surfaces have been grown on (100) and substrates. This composition range of has been successfully achieved for the first time. Solid composition variations as a function of growth temperature and substrate orientations are also discussed.