Pseudopotential calculation of ϵ2 for the zincblende structure: GaAs
- 31 August 1967
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 5 (8), 667-669
- https://doi.org/10.1016/0038-1098(67)90089-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Reflectivity and Band Structure of GaAs, GaP, and Ga(as, P) AlloysPhysical Review Letters, 1965
- Band-Theoretic Model for the Photoelectric Effect in SiliconPhysical Review B, 1965
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Band Structure of Silicon, Germanium, and Related SemiconductorsPhysical Review B, 1962
- Crystal Potential and Energy Bands of Semiconductors. III. Self-Consistent Calculations for SiliconPhysical Review B, 1960
- Symmetry Properties of the Energy Bands of the Zinc Blende StructurePhysical Review B, 1955