High isolation and low insertion loss switch IC using GaAs MESFET's
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 43 (9), 2175-2177
- https://doi.org/10.1109/22.414559
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- High-performance GaAs switch ICs fabricated using MESFETs with two kinds of pinch-off voltages [for handy phone]Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- DC-40 GHz and 20-40 GHz MMIC SPDT switchesIEEE Transactions on Electron Devices, 1987
- GaAs FET RF switchesIEEE Transactions on Electron Devices, 1985
- Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristicsIEEE Transactions on Electron Devices, 1984