Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
- 12 December 2008
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 1, 124002
- https://doi.org/10.1143/apex.1.124002
Abstract
No abstract availableKeywords
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