Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties
- 31 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 296-317
- https://doi.org/10.1016/s0022-0248(98)01346-3
Abstract
No abstract availableKeywords
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