Displacement Thresholds in Semiconductors

Abstract
The paper reviews the current status of displacement threshold determinations, both theoretical and experimental, in semiconductors. The work of Seitz, Kohn, Klontz, Loferski, and Rappaport, Vavilov, et al., and Brown and Augustyniak on germanium are discussed and compared. Measurements of thresholds in Si and InSb also are discussed briefly.