Emission Cross Sections of Excited Fragments Produced by 0-100 eV Electron Impact on SiH4: Application of the “He Standard”

Abstract

The emission cross sections of excited fragments, SiH(A²Δ-X²∏), H Balmer lines and Si I, II lines produced from SiH₄ by electron impact were obtained in an energy range below 100 eV. The performed measurements were based on the “He standard”. The uncertainties of the obtained values were estimated to be less than 12%. The emission cross section of the Si I(4s¹P^o-3p²¹D) singlet was shown to be almost the same magnitude as that of the Si I(4s³P^o-3p²³D) triplet in contrast with the result obtained from a VUV photolyses of SiH₄. The freatures of the optical excitation functions of the atomic fragments were explained in terms of the “ionic core” model.