Line shape of electromodulation in uniform electric field of δ-doped GaAs
- 1 June 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (11), 7489-7492
- https://doi.org/10.1063/1.356620
Abstract
The line shape of electromodulation in uniform electric field of δ-doped GaAs has been calculated and compared with the experiments. The calculations show that the Franz–Keldysh oscillations (FKO) beats observed in experiments are contributed form the interference of heavy-hole and light-hole transitions. The calculations also show that the linear equation of extrema is a good approximation to analyze the electric field from the FKO line shape, although the equation only considers the heavy-hole transition.Keywords
This publication has 11 references indexed in Scilit:
- Franz–Keldysh oscillations of δ-doped GaAsJournal of Applied Physics, 1992
- Comparative Consideration of Photoreflectance and Electroreflectance Spectra of Semiconductors (I) Theoretical RelationsCrystal Research and Technology, 1992
- Comparative Consideration of Photoreflectance and Electroreflectance Spectra of Semiconductors (II). Numerical Calculations for n-type GaAsCrystal Research and Technology, 1992
- Photoreflectance study of surface Fermi level in GaAs and GaAlAsApplied Physics Letters, 1990
- Generalized Franz-Keldysh theory of electromodulationPhysical Review B, 1990
- Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion regionApplied Physics Letters, 1989
- Picosecond response of photoexcited GaAs in a uniform electric field by Monte Carlo dynamicsPhysical Review B, 1988
- Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model systemPhysical Review B, 1988
- Modulation spectroscopy as a tool for electronic material characterizationJournal of Electronic Materials, 1988
- Electric-Field Effects on Optical Absorption near Thresholds in SolidsPhysical Review B, 1966