Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics
- 12 November 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (20), 3311-3313
- https://doi.org/10.1063/1.1418266
Abstract
In this letter, we report on electrical and microstructural properties of ultrathin zirconia dielectrics grown on SiO2 by ultraviolet (UV) ozone oxidation and natural oxidation (no UV light). Capacitance–voltage (C–V) measurements were performed at multiple frequencies on capacitors fabricated from a ZrO2–SiO2 stack. It was found that the C–V curves from samples grown by natural oxidation were distorted and showed severe frequency dependence while samples grown with UV light exposure under otherwise identical conditions had superior electrical behavior. Loss tangent measurements and detailed electron energy loss spectroscopy studies performed on the two samples revealed that the sample grown by natural oxidation was highly oxygen deficient, and this led to its poor electrical properties.Keywords
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