Waveguided electro-optical intensity modulation in a Si/GexSi1−x/Si heterojunction bipolar transistor

Abstract

Optical phase-and-amplitude modulation at 1.55μm in an electro-optic guided-wave Si/Ge_0.2 Si_0.8/Si HBT is investigated using computer-aided modelling and simulation. At an injection of 10¹⁹ electrons per cm³, an intensity modulation of lO dB is predicted for an active length of 390 μm.