Model calculation of the optical properties of semiconductor quantum wells
- 15 March 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (6), 2977-2982
- https://doi.org/10.1103/physrevb.23.2977
Abstract
A simple model system is solved exactly to gain insight on electron-hole interaction effects on the optical properties of semiconductor quantum wells and superlattices. An -layer film of a simple cubic two-band semiconductor with a contact electron-hole interaction is considered, and the optical absorption function is calculated exactly by Green's-function techniques. The electron-hole interaction introduces peaked structures at subband thresholds in qualitative agreement with experiment. The transition from three-dimensional behavior (for large ) to two-dimensional behavior (for ) is also investigated.
Keywords
This publication has 10 references indexed in Scilit:
- Excitons in semi-infinite crystals: Microscopic calculation of optical reflectivitySolid State Communications, 1979
- Eigenstates of excitons near a surfacePhysical Review B, 1978
- Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å)Solid State Communications, 1978
- Nonlocal dielectric susceptibility of a semi-infinite insulatorPhysical Review B, 1975
- Formulas for the Lattice Green's Functions for the Cubic Lattices in Terms of the Complete Elliptic IntegralJournal of the Physics Society Japan, 1971
- Exciton spectra in thin crystalsPhysica Status Solidi (b), 1968
- Coexistence of Local and Band Characters in the Absorption Spectra of Solids I. FormulationJournal of the Physics Society Japan, 1967
- Optical Effects of Energy Terms Linear in Wave VectorPhysical Review B, 1964
- Simplified Impurity CalculationPhysical Review B, 1954
- Wave Functions for Impurity LevelsPhysical Review B, 1954