Theory of optical gain and threshold properties of semiconductor lasers
- 1 March 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 10 (3), 297-305
- https://doi.org/10.1109/jqe.1974.1068141
Abstract
The theory of optical gain in highly doped semiconductors employed for semiconductor lasers is developed based on the Green function approach. With the help of the analytical expression obtained for optical gain, the threshold properties of semiconductor lasers and their dependence on concentration of doping impurities and on temperature are studied. Results of numerical calculations of threshold characteristics for the most interesting cases are presented.Keywords
This publication has 4 references indexed in Scilit:
- Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active RegionsPhysical Review B, 1970
- Spontane und induzierte Emission in LaserdiodenThe European Physical Journal A, 1967
- Effect of Band Tails on Stimulated Emission of Light in SemiconductorsPhysical Review B, 1966
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964