Thermoelectric properties of silicon at high pressures in the region of the semiconductor-metal transition
- 1 July 2003
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 29 (7), 598-601
- https://doi.org/10.1134/1.1598561
Abstract
The thermo emf in Czochralski grown silicon single crystals annealed at 450°C was experimentally studied in a range of pressures up to 16 GPa in a chamber with synthetic diamond anvils. There is a correlation between the curves of thermo emf versus pressure, the semiconductor-metal transition pressure, and the mechanical properties (microhardness, compressibility) of samples with various oxygen content. The values of thermo emf in the high-pressure metallic phases have been determined.Keywords
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