Zn diffusion in Al0.7Ga0.3As compared with that in GaAs
- 31 December 1977
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12), 1024-1025
- https://doi.org/10.1016/0038-1101(77)90215-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Zinc diffusion in AlxGa1−xPSolid-State Electronics, 1976
- Characteristics of the Junction-Stripe-Geometry GaAs-GaAlAs Double-Heterostructure LasersJapanese Journal of Applied Physics, 1974
- Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold currentJournal of Applied Physics, 1974
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973
- A new geometry double-heterostructure injection laser for room-temperature continuous operation: junction-stripe-geometry DH lasersJournal of Applied Physics, 1973