INTERNAL Q SWITCHING IN GaAs JUNCTION LASERS

Abstract

Internally Q‐switched light pulses have been obtained from junction lasers. Narrow bursts of light (after the termination of the injection current pulse. The effect persists for a wide variation in the length of the current pulse, from less than 2 nsec to several μsec. The internal absorption losses controlling Q switching are strongly dependent on both temperature and current. The effect is only seen in diodes with very low transition temperatures (T_t) between the regions of short and long stimulated emission delay times.