Effect of Zn doping on charge transport in
- 1 August 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (6), R3884-R3887
- https://doi.org/10.1103/physrevb.52.r3884
Abstract
The resistivity and the in-plane Hall coefficient are investigated on Zn-doped single crystals with emphasis on the underdoped spin-gap phase (y∼0.37) where a correlation between charge transport and spin dynamics is clearly seen. The doped Zn acts as a strong potential scatterer on one hand, and induces a local spin magnetic moment on the other even when the charge carriers are not localized. It is found that the characteristic temperature in these transport coefficients, which indicates that a spin gap starts to open, do not change with Zn doping in contrast to a radical depression of the superconducting transition temperature.
Keywords
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