Low-threshold lasing from high-density InAs quantum dots of uniform size
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (18), 1561-1563
- https://doi.org/10.1049/el:19991077
Abstract
To construct the active region of a Fabry-Perot laser, high-density InAs quantum dots having a narrow photoluminescence linewidth of ~30 meV have been formed. A very low threshold current density of 76 A/cm2 was achieved at room temperature due to the high gain with narrow linewidth at the ground state of the quantum dots.Keywords
This publication has 5 references indexed in Scilit:
- Shape transition of InAs quantum dots by growth at high temperatureApplied Physics Letters, 1999
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasersIEEE Photonics Technology Letters, 1999
- 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum DotsJapanese Journal of Applied Physics, 1999
- Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transitionApplied Physics Letters, 1997
- 1.3 μm photoluminescence from InGaAs quantum dots on GaAsApplied Physics Letters, 1995