Semiconductor laser analysis: general method for characterising devices of various cross-sectional geometries

Abstract

A formalism for the analysis of semiconductor lasers is described. The treatment includes the interaction between the optical field and the gain profile and thus allows the question of mode stability to be examined. The method of analysis is sufficiently flexible to allow the characterisation of a wide range of devices with varying cross-sectional geometries. In particular, there is no requirement that symmetric structures must be specified to allow analysis. The use of the procedure is illustrated by application to the stripe geometry laser.